| 摘要 |
PURPOSE:To prevent the occurrence of purple break, by forming a bonding part for a Schottky electrode by a Schottky material and a Cr-Ti bonding material, thereby avoiding the separation of metal at a bonding pad part. CONSTITUTION:An Al Schottky gate electrode is formed on a GaAs substrate 1 and extended in the lateral direction of the substrate, and an Al layer 2 is provided. An insulating film 3 is formed on the layer 2, and an opening part for forming a bonding pad part is provided on the Al layer. Cr 8 is deposited on the semiconductor substrate 1 and the opening part of the bonding pad part is coated. On the Cr 8 of the bonding pad forming part of the semiconductor substrate 1, Ti 4, Pt 5 and Au 6 are sequentially deposited, and a bonding pad is formed. |
