| 摘要 |
PURPOSE:To prevent separation of a substrate and wafer and to prevent the occurrence of crystal deffects in an element forming region, by unifying the substrate comprising insulating silicon carbide and the silicon wafer in a transition region. CONSTITUTION:On a substrate 11, a silicon wafer 12 is laminated. With the wafer 12 being compresed to the substrate 11, radiation heating is performed on the entire surface by infrared rays. The infrared rays transmitted through the silicon wafer 12 act on the surface of the substrate 11 and heats the surface. The heating is further continued, the substrate 11 and the silicon wafer 12 are fused and connected at the surface of the substrate 11, and both parts are unified. Based on this fused adhesion, a transition region 13 is formed at the interface between the substrate 11 and the wafer 12. By the transition region 13, the substrate and the silicon wafer 12 constitute a sheet of a semiconductor substrate 10. |
