发明名称 PATTERN FORMATION
摘要 PURPOSE:To form a pattern of high dimensional accuracy with high yield by a method wherein, when the surface of a substrate which has the level difference is flattened indirectly by a level difference relieving member, heat softening type resin is introduced as the level difference relieving member and the surface is heated and flattened. CONSTITUTION:A thermal oxide film 2 of about 1mum thickness, a polycrystalline silicon film 6 of about 0.2mum thickness and an oxide film 3 of about 0.5mum thickness are formed on an Si substrate 1 and an Al layer 4 of about 0.9mum thickness is formed on them by evaporation method. Then a heat softening type resin layer 5 is formed to the minimum thickness with which the resin layer can withstand the processing of the Al layer 4 and does not have pin-holes at the part where the level difference is the highest on the substrate, i.e. above the thermal oxide film 2. Then the substrate 1 is put into a baking furnace and baked at the temperature of about 130 deg.C which is 30 deg.C higher than the softening point of polystyrene. As a result, poly 4-methoxystyrene is softened and its fluidity is increased so that a concave part 9 is filled with the resin 5 and the surface is flattened with the unevenness less than 0.1mum.
申请公布号 JPS59207627(A) 申请公布日期 1984.11.24
申请号 JP19830080883 申请日期 1983.05.11
申请人 HITACHI SEISAKUSHO KK 发明人 TAKEDA YUTAKA;OKAZAKI SHINJI;MURAI FUMIO;SUGA OSAMU;OOHAYASHI HIDEHITO;SHIRAISHI HIROSHI;SAITOU TADASHI
分类号 H01L21/3213;H01L21/302;H01L21/3065 主分类号 H01L21/3213
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