发明名称 |
Photo diode and method for manufacturing same |
摘要 |
A photo diode includes a buried layer of first conductivity type, an epitaxial layer of first conductivity type and an epitaxial layer second conductivity type which are sequentially formed on a semiconductor substrate, a doped shallow junction layer of second conductivity type which is formed using a solid state diffusion process from a surface region to an internal region of the epitaxial layer of second conductivity type, and a silicon oxide film pattern and a silicon nitride film pattern which are sequentially formed on the shallow junction layer.
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申请公布号 |
US7482665(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20050095482 |
申请日期 |
2005.04.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MAENG KYE-WON;BAE SUNG-RYOUL |
分类号 |
H01L31/062;H01L31/10;H01L29/06 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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