| 摘要 |
<p>A semiconductor device is designed to solve the problem of the instability of the surface state of a semiconductor substrate below an oxide layer, based on the generation of a positive charge. According to the invention, an arsenic diffusion-blocking layer (11) is formed between an oxide layer (1) which is formed over one main surface of a semiconductor substrate and an arsenic-containing layer (2) which is formed over the oxide layer (1), and into which hydrogen is diffused in order to block the diffusion of the arsenic contained in the arsenic-containing layer (2) into the oxide layer (1) when annealing is effected, thereby preventing the generation of a positive charge. The invention is applicable to, for example, the field-insulating layer of a complementary MOS integrated circuit or the silicon gate portion of a MOS transistor. </p> |
