| 摘要 |
PURPOSE:To reduce partition noises by bringing the channel length of an MOS type reset transistor to 4mum or less when the MOS type reset transistor is formed between an output floating region constituting an output section in a charge coupled device and a drain connected to a power supply. CONSTITUTION:An N type buried layer 2 is diffused and formed to the surface layer section of a P type Si substrate 1, and driving electrodes 3 and 4 consisting of polycrystalline Si and an output electrode 5 are formed on the buried layer 2 through an oxide film. An N type floating region 6, which is penetrated to the layer 2 and connected to a source amplifier 7 in the substrate 1, and an N type drain region 9, which is positioned at the end section of a channel region 10 consisting of the buried layer 2 and connected to a power supply 8, are each shaped. An MOS type reset transistor 11 is formed on the channel region 10 positioned between the regions 6 and 9, but the length of the region 10 is prescribed previously to 4mum or less in the constitution. Accordingly, the movement of carriers to the region 9 from the region 6 is inhibited by the drift motion of a fringe electric field 14 generated under the region 10, and the variation of carriers is reduced. |
