| 摘要 |
PURPOSE:To avoid electrolytic reaction during the development process of a photoresist film by a method wherein, when a wiring pattern is formed from a metal film composed of two different metal layers, development is performed by semi-dipping method after exposure process. CONSTITUTION:After an aperture is made in an insulating film on the surface of an Si substrate, a barrier metal layer is formed by applying alloy of Ti and W through the aperture. An Al film is formed on the TiW film as a conductive path. Then a positive-type photoresist film is applied on the Al film and the exposure is performed using a mask of required form. The exposed Si substrate is fixed to a substrate fitting table and, after developing solution is dripped on the photoresist surface, the substrate fitting table is rotated so as to make the developing solution penetrate the resist film uniformly to perform semi-dipping development. With this method, as the developing solution does not exist on the back surface of the semiconductor substrate during the development, no current path is formed and electrolytic reaction is avoided. |
