| 摘要 |
<p>PURPOSE:To obtain an optical output section having excellent luminance, response characteristics, gradation characteristics and color reproducibility by forming a phosphor region to one surface of a semiconductor substrate of low impurity density, forming a carrier supply region of high impurity density and a photoelectric convertion region surrounding the carrier supply region to the other surface and making carriers generated in the carrier supply region reach the phosphor region under the state in which carriers are not scattered and are made travel. CONSTITUTION:An electron-ray excitation type phosphor 102 and an n<-> type Si layer 103 as a high resistivity region are laminated on a transparent electrode 101 in the order, the central surface of the layer 103 is projected, an n<+> type region 104 as an electron supply source is formed to the projecting section, and these layer and region are surrounded by a p type region 105. The outside of a boundary section between the regions 103 and 105 is surrounded by an insulator 106, and the surface of the region 105 is coated with a transparent electrode 107. In the constitution, the maximum thickness L of the region 103 is made shorter than a mean free path and electrons can not be scattered and can be made travel, the impurity density of the regions 103, 104, 105 is specified, and the quantity of carriers reaching to the phosphor 102 is controlled.</p> |
