Thin film transistor with wiring layer continuous with the source and drain

摘要

In a semiconductor device comprising a wiring to be connected to the source region 1105, 1106 or the drain region 1107, 1108 of a thin film, transistor X, at least a portion of the wiring comprises a wiring part Y having the same cross-sectional structure as said source region or said drain region. This wiring part is formed continuously and simultaneously with said source region or said drain region in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor. The layers comprise polycrystalline Si 1101, n+Si 1102 and Al, Mo or Cr 1103 on a glass or quartz substrate 1100.