| 摘要 |
PURPOSE:To increase dielectric resistance between a source and a drain by bringing the maximum impurity concentration of a drain region of a conduction type reverse to a substrate to 10<20>/cm<3>-10<18>/cm<3> and coating the surface of the drain region with a high conductive layer in not more than 50nm thickness, at least one part thereof consists of a high melting-point metallic layer or the silicide layer of the metallic layer, when the drain region is formed to an N channel type MOSFET. CONSTITUTION:A thick field oxide film 2 is formed to the peripheral section of a P type Si substrate 1, the surface of the substrate 1 surrounded by the oxide film 2 is coated with a thin gate oxide film 3, and a gate electrode 4 consisting of Si containing an N type impurity is formed at the central section of the surface of the film 3. Both side surfaces of the electrode 4 are coated with SiO2 films 11, and N type drain-source regions 5, 6 in impurity concentration of 10<20>-10<18>/cm<3> are formed to the surface layer section of the substrate 1 through the implantation of As ions while using these electrode 4 and SiO2 films 11 as masks and activation. The upper sections of the regions 5, 6 and the electrode 4 are coated with PtSi layers 12, and precipitation layers 13 in concentration of 50nm or less higher than said concentration by one figure are formed to the surface layers of the regions 5 and 6. |
