| 摘要 |
PURPOSE:To form a voltage dividing resistor with less occuplied area and almost independent of an output voltage by operating a semiconductor circuit in the condition that a half of the voltage applied between a drain electrode and a source electrode of depletion transistors (TRs) connected in series is sufficiently smaller than the threshold voltage of the depletion TR. CONSTITUTION:A series circuit constituted by connecting each gate electrode and each back gate electrode of the depletion N channel MOSFETs Q1-Q3 connected in series to each source electrode of each MOSFET is connected between a voltage power supply terminal and a ground electrode and output terminals 1 and 2 are connected to each connecting point of the series circuit. Further, the threshold voltage and a voltage VDS applied between each drain electrode and each source electrode of each depletion MOSFET are set so that a voltage dividing the VDS by 2 is sufficiently smaller than the threshold voltage VTD of the depletion MOSFETs. |
