| 摘要 |
PURPOSE:To shorten spaces between a gate and a source, and the space between the gate and a drain, and to obtain a FET having small parasitic resistance by depositing an N type semiconductor layer on a semi-insulating substrate, forming a rectifying gate electrode, thickness thereof is 0.5mum or less and which has a side wall consisting of an insular, on the semiconductor layer, and forming ohmic source electrode and drain electrode along the side wall. CONSTITUTION:An N type GaAs layer 12 is grown on a semi-insulating GaAS substrate 11, an Al gate electrode 13 is formed at the central section of the surface of the layer 12, and the side surface of the gate electrode 13 is coated with a SiO2 film 21 in no more than 0.5mum thickness. The whole surface containing these layer 12, electrode 13 and film 21 is coated with an ohmic metal 33 consisting of AuGe, etc. and the metal 33 is coated with a photo-resist film 32, and the metals 33 on the electrode 13 and the film 21 are removed through etching by utilizing the thinning of the thickness of the film 32 on the electrode 13 and at the end section of the film 21. Accordingly, the metals 33 are left on the layer 12 while being brought into contact with the film 21, and the metals 33 are used as a source electrode 14 and a drain electrode 15. |
