| 摘要 |
When the growth of a single crystalline IIIb-Vb group compound is carried out employing the horizontal Bridgeman method or the gradient freeze method, it is likely that polycrystals will be grown, crystal defects will form, and the distribution of impurities will not be uniform, especially if the diameter of the single crystal is large. In the present invention, the cooling rate of the melt is controlled in an inconstant manner. Namely, crystal growth is interrupted at least once and/or the cooling rate at an earlier growth period is controlled at a high value. From 40 to 65% of the total melt crystallizes at the time when 30% of the total time required for growth has elapsed. The high yield of a single crystal is attained according to the present invention.
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