Solid-state imaging device having a reduced image lag

摘要

A solid-state imaging device has a semiconductor substrate of one conductive type. A plurality of light-charge converter regions, of the opposite conductivity type, are formed in the semiconductor substrate. A charge-voltage converter region, formed in the semiconductor substrate, converts the electric charge produced by the light-charge converter regions into a voltage. At least one charge transfer section is formed in the semiconductor substrate for transferring the electric charge produced by the light-charge converter regions to the charge-voltage converter region. At least one charge transfer gate section is in the semiconductor substrate and has a gate electrode for controlling the timing of a transfer of the electric charges from the light-charge converter regions to the charge transfer section. Pulses are generated with a predetermined pulse potential and applied to the gate electrode in the charge transfer gate section. The predetermined pulse potential has the relationship VB+2 phi FP<VTG sub where; VB represents a voltage which completely depletes the light-charge converter region; phi FP represents a difference between a Fermi level of the semiconductor substrate not containing an impurity; and VTG sub represents a potential generated at the semiconductor substrate in the charge transfer gate section by the mentioned pulse.