| 摘要 |
PURPOSE:To achieve a further increased sensitivity of a target for an image pickup tube by increasing the concentration and the thickness of the Te layer of a photoconductive film and adding a given amount of LiF to the Te layer. CONSTITUTION:An Se-system photoconductive film 3 containing As and Te is installed. The concentration of a Te layer is adjusted to 34wt%-50wt% and its thickness is adjusted to 600Angstrom -2,000Angstrom . In addition, from the transparent conductive film 2 side of the conductive film 3 up to an over 50% area of the Te layer excluding an area of 50Angstrom -150Angstrom immediately before the Te layer, 0.01wt%- 1wt% of LiF is added. As the concentration of the Te layer is increased, its thickness is increased achieving a higher sensitivity. Owing to the addition of LiF, only a small dark current and a low after image is caused and baking is hardly caused even when the concentration of the Te layer is increased and its thickness is increased. In addition, since LiF is added up to the over 50% area of the Te layer, changes in a signal current are improved. |
