| 摘要 |
<p>C19-21-0285A GAS CURTAIN CONTINUOUS CHEMICAL VAPOR DEPOSITION PRODUCTION OF SEMICONDUCTOR BODIES Apparatus and process for producing electronicgrade semiconductor bodies are disclosed wherein continuously-pulled slim rod which can be formed in situ from the reaction of a seed crystal and a molten semiconductor material source, is pulled into and through a chemical vapor deposition chamber, having a gas curtain along the inner wall, the slim rod surface being preheated before entry into the deposition chamber where it is simultaneously exposed to focused heating and thermally decomposable gaseous compounds in order to provide suitable surface reaction conditions on the slim rod for the decomposition of the gaseous compounds which results in deposition growth upon the surface of the rod. Single crystal semiconductor bodies are produced according to the process by avoiding poly-growth conditions through the in situ continuously pulled virgin slim rod, preheating of the slim rod for entry into the chemical vapor deposition chamber wherein the rod is simultaneously heated or maintained at reaction temperature conditions while being exposed or contacted with selected thermally decomposable gaseous compounds and continuously drawn through the chemical vapor deposition chamber reaction zone resulting in an enlarged single crystal semiconductor body which is withdrawn continously from the chemical vapor deposition chamber.</p> |
