| 摘要 |
PURPOSE:To improve the accuracy of the gap between the source and drain and thus miniaturize the titled device by a method wherein either one of the source and the drain is placed beside a gate electrode by sandwiching an insulation oxide film, and the channel region is made to creep to the side part of said oxide film. CONSTITUTION:The source 9 and the drain 10 are laminated in the thickness direction of a substrate 12 by sandwiching the gate oxide film 11. The channel region 13 is so formed as to put the tip thereof in contact with said oxide film 11, the upper surface with the source 9, and the lower surface with the drain 10, respectively. Besides, the gate electrode 14 is so arranged as to interpose a nitride film 21 at the medium part of the upper surface of the drain 10, and one side lower part of the electrode 14 and one side of the film 21 are made to contact the end of said oxide film 11 on the opposite side of the channel region 13. An oxide film 17 formed by extension from said oxide film 11 is interposed between the source 9, source electrode 15 and the gate electrode 14. |
