| 摘要 |
A method of manufacturing semiconductor device is provided to compensate the loss of an element isolation film by filing a loose area with a nitride film or an oxide film. An element isolation film(105) includes a first SOD film(102) insulating an active layer on a semiconductor substrate(100) and also a first HDP film. A recess is formed on the active layer, and the second SOD film is covered by a formed damaged region on the first high density plasma film of the element isolation film and recess. The second SOD film is removed until the active layer is exposed, and the recess and damaged region are filled with the second SOD pattern. The nitride pattern is covered with the second SOD pattern filled with the recess.
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