| 摘要 |
PURPOSE:To minimize clutches due to a shock of silicon nitride film reducing the deterioration of moisture resistence by a method wherein an element functional part is limitedly coated with silicon nitride film to be laminated with other protective film. CONSTITUTION:When a silicon nitride film is used as a protective film on an electrode in a silicon planar type NPN high frequency transistor element, the transistor element is coated with the nitride film and selectively etched to leave the nitride film 1 only on the element functional part. Then the nitride film 1 is coated with an silicon oxide film and etched to form another silicon oxide film 2. |
