| 摘要 |
PURPOSE:To prevent a semiconductor element from reduction of yield by a method wherein a metal layer is provided on a conductor layer consisting of the nitride of a metal mainly consisting of a high melting point transition metal on a III-V group compound semiconductor substrate to construct a semiconductor electrode. CONSTITUTION:A conductor layer 2 consisting of the nitride of a metal mainly consisting of a high melting point transition metal, and a metal layer 3 are provided in order on the main surface of a III-V group compound semiconductor substrate 1. An insulating film 5 is covered on the main surface of the substrate 1 containing the upper part of the layer 3, and the substrate 1 is heat-treated at a high temperature according to the rapid heating and rapid cooling method. After then, the film 5 on the surface of the substrate 1 is removed. When rapid- heating.rapid-cooling is performed in such a way, abnormality is not generated on the surface of the layer 3. |
