MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To make fine forming operation easier improving mass productivity by a method wherein a high molecular film pattern is formed making use of the is extremely nature that a material with less value of effective transmission coefficient exothermic. CONSTITUTION:A material 11 with effective transmission coefficient less than that of a substrate 1 is formed on the substrate 1 and then a specified mask pattern 12 is formed on the material 11. After forming a specified pattern 11a by means of etching the material 11 utilizing the pattern 12 as a mask, a high molecular film 13a on the pattern 11a is led to thermal reaction making use of the nature that the material 11a is made extremely exothermic by means of high frequency heating 14 the overall substrate 1. Later the film 13a is removed to form a high molecular film pattern 13b. Therefore a high molecular film may be left on a specified region masklessly flattening the surface easily without any slippage at all.