| 摘要 |
PURPOSE:To contrive economization by reducing the number of processes and the improvement of the yield by removing stepwise differences and forming a contact hole by the same dry etching process. CONSTITUTION:The first metallic layer 3 formed in a semiconductor device is coated with an insulation layer 4. After said layer 4 is coated with a photo resist film 5, an aperture 8 is formed in said film 5 above the metallic layer 3. The surface layer including the aperture 8 is dry-etched until the metallic layer 3 exposes, and accordingly the contact hole 6 is formed in said layer 4. The second metallic layer 7 is formed in the hole 6 and onto said layer 4 in its periphery. Thereby, the removal of the stepwise differences and the formation of the hole are perfomed by the same dry etching process. |
