发明名称 SEMICONDUCTOR DIFFERENTIAL PRESSURE TRANSMITTER
摘要 PURPOSE:To improve an impact pressure evading function and obtain a small-sized, simplified equipment by linking a high-pressure side pressure receiving chamber to a high-pressure side measuring chamber through a high-pressure side isolation chamber, and a low-pressure side pressure receiving chamber to a low-pressure side measuring chamber through a low-pressure side isolation chamber. CONSTITUTION:When impact pressure is applied to the high-pressure side pressure receiving diaphragm 12 or low-pressure side pressure receiving diaphragm 13, the impact pressure is transmitted to the pressure receiving chamber 14 or 15 firstly, and then to the isolation chamber 17 or 18 from the pressure receiving chamber, and the pressure is then transmitted to the measuring chamber 26 or 27 through pressure lead paths 19 and 28 or 20 and 29. Namely, the pressure is transmitted from the isolation chamber formed of a center diaphragm 16 to the measuring chamber secondarily. When excessive differential pressure is generated on both sides of the pressure receiving diaphragm, the high or low-pressure side diaphragm is seated on the flank of the a pressure receiving member, but the center diaphragm 16 has specific rigidity large enough not to seat on the flank of the isolation chamber. This constitution allows a differential pressure sensor 21 to evade the impact pressure and its constitution is reduced in size and simplified.
申请公布号 JPS59203936(A) 申请公布日期 1984.11.19
申请号 JP19830078601 申请日期 1983.05.04
申请人 HITACHI SEISAKUSHO KK 发明人 HIDA TOMOYUKI;YAMAMOTO YOSHIKI;NAGASU AKIRA;TAKAHASHI YUKIO
分类号 G01L9/04;G01L9/00;G01L13/02 主分类号 G01L9/04
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