METHOD OF OBTAINING POLYCRISTALLINE SILICIUM OF SEMICONDUCTOR PURITY,申请号PL19830241880-传众专利搜索

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发明名称	METHOD OF OBTAINING POLYCRISTALLINE SILICIUM OF SEMICONDUCTOR PURITY
摘要
申请公布号	PL241880(A1)	申请公布日期	1984.11.19
申请号	PL19830241880	申请日期	1983.05.09
申请人	ZAKL AZOTOWE IM F DZIERZYNSK	发明人	ZYCH TERESA;SZCZESZEK IRENEUSZ;LUDWICZAK STANISLAW;PYZIKOWSKI JERZY;JURKIEWICZ MARIAN;KLOS KAZIMIERZ
分类号	C01B;C01B33/02;(IPC1-7):C01B/	主分类号	C01B
代理机构		代理人
主权项
地址

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