| 摘要 |
PURPOSE:To expand the operating margin at high and low temperatures by forming a spacer film thickness of a detecting section thicker than other propagating path part in forming a transfer pattern of a magnetic bubble memory chip. CONSTITUTION:In forming the transfer pattern of a magnetic bubble memory chip, the film thickness of the spacer of the detecting section, i.e., that of the spacer from a stretcher pattern to a detector 7 in a read major line 6 is made thicker than the thickness of the other propagating path. Thus, the operating margin at high and low temperature is expanded. |
