发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PURPOSE:To release a latch-up instantaneously even on the generation of the latch-up, and to return the titled integrated circuit to normal logical operation by providing a current abnormality detecting means and a switching means interrupting a conduction path on the basis of an output from said detecting means. CONSTITUTION:A resistor R3 functioning as a current abnormality detecting means is inserted and connected between a CMOS inverter circuit 11 and a first potential supply source VDD, and an N channel type MOS transistor Q3 conducted and controlled at the potential of a node between said resistor R3 and a P channel type MOS transistor Q1 is connected between the CMOS inverter circuit 11 and a second potential supply source GND. The MOS transistor Q3 serves as a switching means interrupting a conduction path to the second potential supply source GND from the first potential supply source VDD on the state of a latch-up, and a capacitor C for removing switching noises at a node between the resistor R3 and the MOS transistor Q1 is inserted and connected between a gate in the MOS transistor Q3 and the second potential supply source GND. |
申请公布号 |
JPS59202659(A) |
申请公布日期 |
1984.11.16 |
申请号 |
JP19830077301 |
申请日期 |
1983.04.30 |
申请人 |
TOSHIBA KK;TOUSHIBA MAIKON ENGINEERING KK |
发明人 |
YUYAMA TOSHIO;KISHIMOTO HIROSHI |
分类号 |
H01L27/08;H01L27/092;H01L29/78;H03K19/0948 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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