| 摘要 |
PURPOSE:To obtain the titled member, which can inhibit the increase of dark currents even by a continuous-current test and an S/N ratio thereof is high, by making containing C in an amorphous semiconductor film. CONSTITUTION:A Cr electrode 12, an a-SiXC4-X; H film (an insulating film) 13, an intrinsic a-Si; H film (an amorphous photoconductive film) 14, an a-SiXC4-X; H, B film (a P type amorphous semiconductor film) 15 and an ITO light-transmitting electrode 16 are laminated on a ceramics substrate 11 in succession. Since the P type amorphous semiconductor film 15 is formed by a material of a-SiXC4-X; H, B, the generation of internal stress on the doping of boron is relaxed, and the solid quality of the film is formed while adhesive property with the light-transmitting electrode 16 is also improved. Since C is contained, the band gap of the interface of said semiconductor film 15 and the amorphous photoconductive film 14 is increased. |
