| 摘要 |
PURPOSE:To enable to easily form a contact hole of 1mum or less and a wiring even according to a photolithography by a method wherein a polycrystalline Si is deposited on a matter to be etched and the polycrystalline Si is converted into a metal silicide. CONSTITUTION:A polycrystalline Si3 is deposited on an Si substrate 1 with the surface, whereon an insulating film 2 has been formed, and, after that, a part of the polycrystal is removed. At this time, the size of the contact hole is set at l1. Then, such metals as palladium, platinum, nickel, etc., are deposited. When a thermal treatment is perfomed at 250-500 deg.C, reaction effects between the metals and the polycrystalline Si and a metal silicide 5 is formed. The metals only are etched and the unreacted metals are removed by performing an etching using a solution (in case of palladium, NH4I-I2 or KI-I2 solution is used and in case of platinum, aqua regia is used) which doesn't etched the metal silicide. Then, after the insulating film 2 was removed by performing an etching, a diffusion layer 6 is formed. Among films to be used as an insulating film are ones such as oxide film, nitriding film, alumina film, tantalum oxide film, etc. |
