| 摘要 |
PURPOSE:To obtain the titled member, which can inhibit the increase of dark currents even by a continuous-current test and an S/N ratio thereof is high, by forming a high resistance film containing Si between an amorphous photoconductive film and an amorphous semiconductor film. CONSTITUTION:A Cr electrode 12, an a-SiXC4-X; H film (an insulating film) 13, an intrinsic a-Si; H film (an amorphous photoconductive film) 14, an a-SiXC4-X; H film (a high resistance film) 15, an a-Si; H, B film (a P type amorphous semiconductor film) 16 and an ITO light-transmitting electrode 17 are laminated on a ceramics substrate 11 sequentially. Stress applied to the P type amorphous semiconductor film 16 is dispersed and relaxed because the high resistance film 15 of a-SiXC4-X; H is interposed between the a-Si; H film 14 and the a-Si; H, B film 16. |
