| 摘要 |
According to the present invention, disclosed is a sputtering apparatus comprising: a chamber part which includes a housing, providing a space wherein a sputtering process is proceeded; a sputtering target part including a sputtering target; a substrate support part to support a flat substrate opposite to the sputtering target, and deposited with a thin film through the sputtering process; and a sputtering gas supply part to supply a sputtering gas. The sputtering gas supply part includes a main supply module to supply the sputtering gas for the sputtering process, and a sub supply module to inject the sputtering gas to an upper area of an outside front part of the sputtering target. The sputtering apparatus is able to reduce residual stress deviation of a thin film by reducing a difference in thickness of the thin film or a deposition density between a center part and an outside part of the thin film deposited on the substrate. |
