FORMATION OF NEGATIVE TYPE RESIST PATTERN

摘要

PURPOSE:To form a pattern having superior dry etching resistance, heat resistance and high resolving power with high sensitivity by irradiating a resist film of a polymer contg. quinone diazide with far ultraviolet rays and by heating the irradiated film at a prescribed temp. before development. CONSTITUTION:A resist film of a polymer contg. quinone diazide formed on a substrate is irradiated with far ultraviolet rays of 180-300nm wavelength. The irradiated film is heated at 50-120 deg.C and developed.