| 摘要 |
PURPOSE:To enable to stably irradiate ion beams on a matter to be processed and to enable to significantly reduce the treating defect due to attachment of thin pieces or bulk matters onto the matter to be processed as well by a method wherein metal meshes are arranged on the surface of a side, on which an ion generation chamber and the matter to be processed of ion lead-out electrode have been arranged. CONSTITUTION:The interior of a vacuum vessel 11 is vacuum-exhausted at the degree of vacuum of 2X10<-5>Torr or less by a vacuum pump and, after that, Ar gas is introduced in an ion generation chamber 13 by a pipe 12 at a constant flow of 6.0 to 7.0SCCM. At this time, the degree of vacuum in the vacuum vessel 11 stands at 1.8X10<-4>Torr. Then, current is conducted to a coil 13a for magnetic field generation, an ion lead-out electrode 15 and the prescribed electrodes in the ion generation chamber 13 and, ion beams 17 of accelerated Ar ion particle are irradiated on a matter 14 to be processed. At this point, though a thin film is attached on the surfaces of metal meshes 18, the adhesion of the thin film formed on the surfaces of the metal meshes 18 is that due to the uneven form of the metal meshes 18, thereby enabling to reduce drop of thin pieces or marsive matters while ion beams 17 are being irradiated. |
