发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To give an internal signal noises only by applying a signal to a pad, and to test an effect on the operation of a device by noises simply by providing a noise generating circuit by an external control signal. CONSTITUTION:A drain electrode 4a in a MOS transistor 4 is connected to a first supply wiring 1, a source electrode 4b to a second supply wiring 2 and a gate electrode 4c to a control signal line 3 respectively. The control signal line 3 is connected to a pad for applying a control signal from the outside of a semiconductor device. Noises through which Vcc potential is drawn into ground potential can be generated by applying voltage to the gate electrode 4c in the MOS transistor 4 connected to the control signal line 3 from the outside and bringing the MOS transistor 4 to the state of conduction. To ground potential, on the other hand, noise voltage in the forward direction is applied.
申请公布号 JPS59202644(A) 申请公布日期 1984.11.16
申请号 JP19830076952 申请日期 1983.04.30
申请人 MITSUBISHI DENKI KK 发明人 MOROOKA KIICHI;MASUKO KOUICHIROU
分类号 G01R31/20;H01L21/66;H01L21/822;H01L27/04 主分类号 G01R31/20
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