| 摘要 |
PURPOSE:To simplify the entire circuit constitution and to decrease the power consumption by controlling directly the amplitude of a superhigh frequency electrical signal of a superhigh frequency active circuit by means of the intensity or wavelength of light. CONSTITUTION:Let a field effect transistor (TR) 11 made of a photo semiconductor material, .e.g. GaAs be a semiconductor active element constituting a superhigh frequency active circuit 4, e.g., a superhigh frequency amplifier. Further, when a light L is made incident to the field effect TR11, an electrical signal taking a level in response to the intensity or wavelengh of the light L is led out from the field effect TR11 and the superhigh frequency electrical signal having the amplitude controlled by the light L is obtained. |
