| 摘要 |
PURPOSE:To obtain a pattern with excellent accuracy by forming electrode and wiring by metal silicide without using a resist. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on an Si substrate 1, an amorphous Si 4 is deposited by the electron beam vacuum deposition method and an SiO2 5 is sputtered. The substrate is heated, for example, up to about 250 deg.C, the region 4' is selectively scanned with an Ar laser for example, in diameter of about 1mum and an output of about 1W without using the mask, and thereby it is converted to a poly-Si region 6 by heating. The SiO2 5 is removed by the HF solution and amorphous film 4 is selectively removed with a mixed solution of HF + HNO3 + H3PO4 + HClO4 by making use of the etching difference. Then, an Mo 7 is vacuum-deposited and it is heated to form an electrode 8 of MoSi2 and the Mo 7 is removed with the mixed solution of HNO3 + H3PO4 + CH3COOH. With such constitution, a problem occurring when the resist is used in the existing method can be solved and a fine pattern can be formed. |
