Strain gauge and method of producing it

摘要

Strain gauge composed of a semiconductor layer deposited on an elastic metallic base covered with an insulating layer, and method of producing it. To form the strain gauge, a semiconductor layer is deposited directly in polycrystalline form and doped on the insulating layer on the metallic base. Said layer may be a germanium layer which is vapour-deposited at a temperature of < 350 DEG C and a pressure of > 10<-6>mbar or a silicon layer which is deposited at a temperature of < 350 DEG C in a plasma-enhanced CVD (chemical vapour deposition) process using SiH4 in H2 in a ratio of 1 : 10 to 1 : 100 as processing gas at a pressure such that the mean dwell time of the gas atoms in the reactor is greater than 10 s. Such strain gauges are simple to produce and have high K factors (30 to 35 in the case of germanium). <IMAGE>