| 摘要 |
PURPOSE:To enable the accurate level selecting action by a method wherein the N type and P type channel threshold values are controlled by ion implantation by using the same photo mask, thus using either one of FETs as normally OFF- type and the other as normally ON-type, when the C-MOSFET is manufactured on a semiconductor substrate. CONSTITUTION:The P-channel MOSFET element Q5 and the N type channel one Q6 are connected in series, the power source voltage VCC is connected to the source of the element Q5, and the drain of the element Q6 is earthed. The gates of these elements Q5 and Q6 are collectively connected to an output terminal B3. Besides, the source of the element Q7 of the P-channel MOSFET element Q7 and the N type channel one Q8 is connected to the power source voltage VCC, and the drain of the element Q8 is earthed. The gates of these elements Q7 and Q8 are collectively connected to an input terminal A3. In this constitution, the N type and P type threshold values are kept different from each other by the ion implantation using the same mask.
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