发明名称 |
Method of making an improved MESFET semiconductor device |
摘要 |
An improved MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a self-aligned gate process which consists of an implanted channel stopper underneath a thick field oxide, depletion and enhancement mode device channel implants, implanted source and drain regions, selective oxidation to form self-aligned gates, metal-semiconductor junctions as control elements, barrier metal and a thin film metallization system. The process and device structure are suited for high packing density, very low speed power product and ease of fabrication making it attractive for digital applications.
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申请公布号 |
US4481704(A) |
申请公布日期 |
1984.11.13 |
申请号 |
US19820339543 |
申请日期 |
1982.01.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DARLEY, HENRY M.;HOUSTON, THEODORE W.;KRUGER, JAMES B. |
分类号 |
H01L21/033;H01L21/338;H01L21/8236;H01L27/095;H01L29/47;H01L29/812;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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