| 摘要 |
<p>PURPOSE:To cut a wafer for a semiconductor laser along a cleavage plane even when there is a difference between angles within a predetermined range between the direction of a groove through selective etching and the direction of cleavage in the wafer by bringing cutter into contact with the dovetail groove, relatively moving the cutter and cutting the wafer. CONSTITUTION:A surface to which the side end sections of dovetail grooves 4... are opened forms a cleavage plane. The direction orthogonal to the dovetail grooves 4... is directed in the direction of 110 as the direction of a line crossing of a main surface 001 and the cleavage plane, and a V-shaped groove 5 is formed through selective etching in the direction. A surface to which the side end section of the V-shaped groove 5 is opened is represented as a 110 surface, and forms a surface parallel with the resonant end surface of a semiconductor laser. A wafer 2 to which the dovetail grooves 4... are shaped is fixed onto a table, a cutter 6 is brought into contact with one end section of the bottom 3 of the dovetail groove 4 at the central section of the wafer 2 or a section entering to the inside from an end section, and said section is slotted and cloven slightly. When the cutter 6 is further slotted and the table is moved under the state in which the cutter is tilted at a fixed angle theta, the edge 7 is shifted relatively along a cleavage prearranged line on the bottom 3, and the wafer 2 is cut into two sections.</p> |
