发明名称 ELECTROSTATIC BREAKDOWN PROTECTIVE ELEMENT
摘要 PURPOSE:To protect an internal element from surges in both positive and negative directions without damaging the function of an integrated circuit by adding a current limiting circuit against a surge, through which a protective diode is directed in the opposite direction, and limiting the currents of the internal element. CONSTITUTION:A resistor 10 is constituted between electrodes 6, 7 in an N type diffusion region 4 selectively formed in an N type epitaxial region 2 and a P type diffusion region 3, a diode 12 is constituted by a P-N junction between a P type insulating isolation region 1 and the N type epitaxial region 2, and a P-N-P transistor 11 using each region 3, 2, 1 as an emitter, a base and a collector respectively is constituted. When a positive surge is applied, the transistor 11 is operated by the voltage drop section of the resistor 10 to absorb the surge, and currents flowing through an internal element 9 are limited. When a negative surge is applied, voltage applied to the internal element 9 in the forward direction of the diode 12 is limited.
申请公布号 JPS59200454(A) 申请公布日期 1984.11.13
申请号 JP19830074474 申请日期 1983.04.27
申请人 NIPPON DENKI KK 发明人 FUJI TAKASHI
分类号 H01L27/04;H01L21/822;H01L23/62;H01L27/02;H01L27/06;H01L29/866 主分类号 H01L27/04
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