发明名称 Semiconductor device having a circuit for generating a voltage higher than a supply voltage and responsive to variations in the supply voltage
摘要 In a semiconductor device having a signal line on which a voltage higher than the voltage supply is generated, a conductive layer following the potential variance of the voltage supply is positioned under an insulating film directly below the signal line in order to make the level of the signal line follow the potential variance of the voltage supply.
申请公布号 US4482825(A) 申请公布日期 1984.11.13
申请号 US19810326899 申请日期 1981.12.02
申请人 FUJITSU LIMITED 发明人 NOZAKI, SHIGEKI;TAKEMAE, YOSHIHIRO;KABASHIMA, KATSUHIKO;ENOMOTO, SEIJI
分类号 H01L21/822;G11C11/4074;G11C11/4076;G11C11/4094;H01L21/82;H01L23/52;H01L23/58;H01L27/04;(IPC1-7):H03K17/06;H01L27/02;H03K17/14;H03K17/16 主分类号 H01L21/822
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