| 摘要 |
PURPOSE:To enable the control of film thickness with high accuracy by controlling the film thickness of an insulative thin film formed on a substrate basing on the current value indicated by an ammeter in a DC circuit so as to obtain a thin film of a specified thickness. CONSTITUTION:Electrodes 6, 7 are disposed in a vacuum chamber 10 for forming thin film to confront to each other and plasma is generated between these electrodes using a high frequency circuits 6-9. Simultaneously, electrodes 1, 4 are disposed in a thin film forming chamber 10 to confront to each other. A DC circuit 1-2-4 is provided with an ammeter 5 which impresses a voltage to form an insulative thin film by attracting either positive ions or negative ions in the plasma to a substrate 3 for forming a thin film provided to either one of said electrodes 1, 4. The film thickness of the insulative thin film to be formed on the substrate 3 is controlled basing on the current value indicated by the ammeter 5 to produce a thin film having a specified film thickness. In this way, the control of the film thickness is performed with high accuracy.
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