VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A vertical memory device includes a first common source line contact plug which has an inside wall of limiting a recess region in an opening part for a common source line. A method of manufacturing a vertical memory device includes providing a substrate which includes a cell region and a peripheral region; forming a mold structure in the cell region; penetrating the mold structure, and forming an opening part for the common source line which is extended in a first direction vertical to the upper surface of the substrate; forming a first contact plug which has the inside wall of limiting the recess region in the opening part for the common source line; and forming a common source bit line contact which can be electrically connected to the inside wall of the first contact plug. So, the reliability of the vertical memory device can be improved.