| 摘要 |
PURPOSE:To produce the titled chipcarrier applicable to LSI chip with high heating capacity enabling the chipcarrier to be mounted at high density by a method wherein the chip-carrier is provided with a conductive circuit connected to the sides of main body and lower periphery for electrical connection to the lead of LSI chips and a radiator for radiation to the upper part of LSI chips. CONSTITUTION:A radiator 14 pierces a carrier main body 11. A conductive circuit 12 connected to the inside of the carrier main body 11 and the lower periphery is provided with a space to contain LSI chip 13 internally. The LSI chip 13 is connected to the radiator 14 through a junction material 15 such as solder or adhesive etc. A lead 16 connected to the conductive circuit 12 is electrically connected to another conductive circuit 20 on a print circuited substrate 19. This chipcarrier may be applicable to LSI chip 13 with high heating capacity since the chipcarrier can conduct heat to a conductor such as copper tungusten alloy with thermal resistance lower than that of the material of the carrier main body 11 e.g. aluminaceramic as well as a heat sink etc. mounted on the conductor. |
