发明名称 MANUFACTURE OF MIC(MICROWAVE) DEVICE
摘要 <p>PURPOSE:To reduce thermal stress, and to reduce the warps of an MIC circuit and a metal carrier after the junction-cooling process is completed by a method wherein the metal carrier is cooled, while a heated high temperature block is put on the MIC circuit to hold the circuit at a high temperature. CONSTITUTION:A metal carrier 5 is heated at a temperature higher than the fusing point (280 deg.C) of an Au-Sn alloy 6 to be used as a brazing material. Such heating of the metal carrier 5 is performed on a heating pedestal 8 using a heater 7, and moreover the heating-junction process is performed in a nitrogen atmosphere to prevent the Au-Sn alloy 6 from oxidation. After then, at the point in time when the Au-Sn alloy 6 is molten, an MIC circuit 1 is put thereon, junction is performed, and at the cooling process thereof, the metal carrier 5 is put on a heat dissipating pedestal 9 to be cooled, the MIC circuit 1 having a small thermal expansion coefficient is heated using a heated block 10, and when the Au-Sn alloy 6 is to be hardened, the temperature of the MIC circuit 1 (a dielectric substrate 2) is made as to be held high, and the temperature of the metal carrier 5 is made so as to be held low.</p>
申请公布号 JPS59198726(A) 申请公布日期 1984.11.10
申请号 JP19830073206 申请日期 1983.04.26
申请人 FUJITSU KK 发明人 YABE NORIO;TAKAHARA TOSHIO;KIKUCHI HIROMI
分类号 H01L21/52;H01L21/58;(IPC1-7):H01L21/58 主分类号 H01L21/52
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