| 摘要 |
PURPOSE:To enhance reaction activity of raw material gas, and to reduce the feed rate necessary for crystal growth of the raw material gas by a method wherein the raw material gas is introduced to pass through a gas passage chamber provided underside of a susceptor in a reaction vessel. CONSTITUTION:A gas passage chamber 16 is provided underside of a susceptor 14, and at least a part of raw material gas is made as to pass through the gas passage chamber 16 thereof. For example, the doughnut type raw material gas passage chamber 16 manufactured of quartz is provided at space inside of the susceptor 14 manufactured of graphite and having a cylindrically drooping part at the peripheral edge, whose central part of the back is supported by b rotary shaft 15, and the underside of the chamber thereof is connected to a gas introducing pipe 18 manufactured of stainless steel through a joint 17. Thereupon when crystal growth of InP is to be performed, InP single crystal wafers are used for growth substrates 13, the susceptor 14 is held at the temperature of 650 deg.C by a heater 20, rotated by 6 times for every minute, H2 gas containing TeIn is fed as the raw material gas from an introducing pipe 21, and moreover H2 gas containing PH3 is fed from the introducing pipe 18. |
