| 摘要 |
PURPOSE:To reduce the possibility of the disconnection of a conductive wiring layer by a method wherein the conductive film of a bonding pad part provided on a semiconductor chip should be an aluminum film or aluminum silicon film, and the conductive wiring layer which connects elements to each other and the element to the bonding pad an aluminum-copper alloy film. CONSTITUTION:The aluminum silicon film 6 of the film thickness of 1mum is adhered on an SiO2 film 5 on an Si substrate 4, and next a resist film pattern 7 coating the bonding pad part 1 is formed. Thereafter, exposed said film 6 is removed, thus leaving said film 6 only at said part 1. Then, the aluminum-copper alloy film 8 of the film thickness of 1mum is adhered from above the resist film pattern 7. Said pattern 7 is removed by resolution, and the same time said alloy film 8 on the pattern is removed by lift-off. After a resist film pattern 9 which masks a wiring layer 2 including said part 1 is formed, said part 1 and said layer 2 are patterned by etching the exposed part. |
