| 摘要 |
PURPOSE:To suppress residual image, especially high light residual image by impressing a step voltage having at least >=2 steps to an electrode at incident light side during a vertical blanking period. CONSTITUTION:A p-channel semiconductor substrate 2 is provided with the 1st n<+> region 4 and the 2nd n<+> region 6 at a charge transfer section and a p<+> region 8 as a channel stopper. Gate electrodes 12, 14 are provided onto the region 4 via an insulation layer 10 and the region 6 is provided with a metallic electrode 16. A smoothing layer 18 made of the insulation layer is formed on the electrode 16. An electrode 22 in contact with the electrode 16 is formed on the layer 18 via a contact hole 20 and a photo conductor 24 performing photoelectric conversion and charge storage, e.g., amorphous silicon is formed. The electrode 26 at incident light side, e.g., indium-titanium-oxide film is formed on a photo conductor 24. Further, a DC voltage of 1.5-3V is impressed from an incident light side electrode power supply 28.
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