| 摘要 |
PURPOSE:To form a membrane with high quality on an insulating substrate in good efficiency, by adding a mesh anode to a conventional DC bipolar sputtering apparatus while applying a high frequency power source to said mesh anode and a substrate holder. CONSTITUTION:Predetermined voltage is applied to a high voltage DC power source 18 and a high frequency bias power source 20 to clean the interior of a chamber 10 and the bias power source 20 is lowered to a predetermined value to open a shutter 17. Glow discharge is generated between a mesh anode 16 and a target 12 to ionize Ar and the Ar ion is collided with the target 12 to bring about the giving and receiving of energy between the Ar ion and the Ta atom from the target 12. The Ta ionic atom is issued out from the target 12 to react with N2 and the reaction product is adhered onto substrates 141-144 through the pores 15 of the mesh anode 16 to form a tantalum nitride membrane. Because the high frequency bias power source 20 is connected between the mesh anode 16 and a substrate holder, a bond wherein negative bias is applied to the substrates is formed and the substrates are cleaned by the impact of the Ar ion. |
