| 摘要 |
In an organic light emitting display device according to the present invention, a light shielding layer and an etch stop layer are arranged in a thin film transistor arrangement region on a first substrate. After that, a thin film transistor is arranged on an upper part thereof. The thin film transistor comprises an oxide semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, a source electrode and a drain electrode. A contact hole is formed in the first insulating layer and the second insulating layer. The drain electrode is electrically connected to the etch stop layer. The potential of the drain electrode is the same as the potential of the light shielding layer. So, a leakage current can be prevented. |
